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| UNISONIC TECHNOLOGIES CO., LTD 7P20 Preliminary Power MOSFET 200V P-CHANNEL MOSFET DESCRIPTION The 7P20 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. They are also well suited for high efficiency switching DC/DC converters. FEATURES * RDS(ON) 0.69 @VGS = -10 V * Ultra low gate charge ( typical 19 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain Lead-free: 7P20L Halogen-free: 7P20G 1.Gate 3.Source ORDERING INFORMATION Normal 7P20-TN3-R Ordering Number Lead Free 7P20L-TN3-R Halogen Free 7P20G-TN3-R Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel www.unisonic.com.tw Copyright (c) 2008 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-288.a 7P20 PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 2) Avalanche Current (Note 2) Single Pulsed Avalanche Energy (Note 3) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise specified) RATINGS UNIT -200 V 30 V -5.7 A -22.8 A -5.7 A 570 mJ 5.5 mJ -5.5 V/ns Ta = 25C 2.5 PD Power Dissipation W TC = 25C 55 Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=26.3mH, IAS=-5.7A, VDD=-50V, RG=25 4. ISD-7.3A, di/dt300A/s, VDDBVDSS SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL JA JC MIN TYP MAX 110 2.27 UNIT /W /W ELECTRICAL CHARACTERISTICS (Tc=25C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time SYMBOL BVDSS BVDSS/TJ IDSS IGSS VGS(TH) RDS(ON) gFS CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF TEST CONDITIONS VGS=0 V, ID=-250 A ID=-250A, Referenced to25C VDS=-200V, VGS=0V VDS=0V, VGS=30V VDS=VGS, ID=-250A VGS=-10V, ID=-2.85A VDS=-40V, ID=-2.85A (Note 1) MIN -200 -0.1 -1 100 -3.0 0.54 3.7 590 140 25 19 4.6 9.5 15 110 30 42 -5.0 0.69 TYP MAX UNIT V V/C A nA V S pF pF pF nC nC nC ns ns ns ns VDS=-25V, VGS=0V, f=1.0MHz 770 180 35 25 VDS=-160V, VGS=-10V, ID=-7.3A (Note 1, 2) VDD=-100V, ID=-7.3A, RG=25(Note 1, 2) 40 230 70 90 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-288.a 7P20 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=-5.7A, VGS=0V Maximum Body-Diode Continuous Current IS Maximum Pulsed Drain-Source Diode ISM Forward Current Body Diode Reverse Recovery Time tRR VGS=0V, IS=-7.30 A dIF/dt=100A/s (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test : Pulse width300s, Duty cycle2% Note: 2. Essentially independent of operating temperature MIN TYP MAX UNIT -5.0 -5.7 -22.8 180 1.07 V A A ns C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-288.a 7P20 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + L RG Compliment of D.U.T. (N-Channel) VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS (Driver) P.W. Period D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM di/dt Body Diode Reverse Current VDS (D.U.T.) VDD Body Diode Recovery dv/dt Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-288.a 7P20 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS tp Time VDD RG VDD D.U.T. tp IAS BVDSS ID(t) VDS(t) -10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-288.a 7P20 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-288.a |
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